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Datasheet BS250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BS250 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS250 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
DESCRIPTION P-channel enha |
 NXP Semiconductors |
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| 6 | BS250 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
· · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown
E
A B
TO-92 Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40
Mechanical Data
· |
 Diodes Incorporated |
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| 5 | BS250 | DMOS Transistors (P-Channel) BS250
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦
High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown
max. ∅ .022 (0.55) .098 (2. |
 General Semiconductor |
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| 4 | BS250 | P-Channel 60-V (D-S) MOSFET TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TP0610L TP0610T VP0610L VP0610T BS250
V(BR)DSS Min (V)
−60 −60 −60 −60 −45
rDS(on) Max (W)
10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V 14 @ VGS = −10 V
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 Vishay Siliconix |
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