|
|
Número de pieza | BS250 | |
Descripción | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BS250 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
· High Input Impedance
· Fast Switching Speed
· CMOS Logic Compatible Input
· No Thermal Runaway or Secondary Breakdown
Mechanical Data
· Case: TO-92, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Pin Connection: See Diagram
· Approx Weight: 0.18 grams
EA
B
C
D
BOTTOM S G D
VIEW
HH
G
TO-92
Dim Min Max
A
4.45
4.70
B
4.46
4.70
C 12.7 —
D
0.41
0.63
E
3.43
3.68
G
2.42
2.67
H
1.14
1.40
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
–VDSS
–VDGS
VGS
–ID
Pd
Tj, TSTG
Value
60
60
±20
250
830
-55 +150
Unit
V
V
V
mA
mW
°C
Inverse Diode @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (Typ.) @ VGS = 0, IF = 0.15A, Tj = 25°C
Symbol
IF
VF
Value
0.15
0.85
Unit
A
V
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Switching Times
Turn On Time
Turn Off Time
Symbol Min Typ Max Unit
Test Condition
-V(BR)DSS 60 70 —
V ID = 100µA, VGS = 0
-VGS(th)
—
1.0 3.0
V VGS = VDS, –ID = 1.0mA
-IGSS — — 20 nA -VGS = 15V, VDS = 0
-IDSS — — 0.5 µA -VDS = 25V, VGS = 0
rDS (ON)
—
3.5 5.0
W -VGS = 10V, –ID = 0.2A
RqJA
— — 150 K/W Note 1
gFS
—
150
—
mS
-VDS = 10V, –ID = 0.2A,
f = 1.0MHz
Ciss
—
60
—
pF
-VDS = 10V, VGS = 0,
f = 1.0MHz
-VGS = 10V, –VDS = 10V,
ton — 5 — ns RD = 100W
toff — 25 —
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
DS21902 Rev. D-3
1 of 2
BS250
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BS250.PDF ] |
Número de pieza | Descripción | Fabricantes |
BS250 | P-channel enhancement mode vertical D-MOS transistor | NXP Semiconductors |
BS250 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR | Diodes Incorporated |
BS250 | DMOS Transistors (P-Channel) | General Semiconductor |
BS250 | P-Channel 60-V (D-S) MOSFET | Vishay Siliconix |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |