Datasheet TMF8901F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TMF8901F	Si RF LDMOS Transistor Semiconductor TMF8901F Si RF LDMOS Transistor SOT-89 Unit in mm □ Applications - VHF and UHF wide band amplifier 4 □ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency η	AUK

TMF89 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TMF8901F	Si RF LDMOS Transistor Semiconductor TMF8901F Si RF LDMOS Transistor SOT-89 Unit in mm □ Applications - VHF and UHF wide band amplifier 4 □ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz -	AUK

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Número de pieza	Descripción	Fabricantes	PDF
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