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PDF TMF8901F Data sheet ( Hoja de datos )
| Número de pieza | TMF8901F | |
| Descripción | Si RF LDMOS Transistor | |
| Fabricantes | AUK | |
| Logotipo |  |
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Semiconductor
TMF8901F
Si RF LDMOS Transistor
□ Applications
- VHF and UHF wide band amplifier
SOT-89
Unit in mm
□ Features
- Power gain
GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power
POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency
ηD = 60 % (typ.)
□ Marking
4
8901
123
www.DataSheet4U.com
4
Pin Configuration
1. Gate
2. Source
3. Drain
4. Source
□ Absolute Maximum Ratings (TA = 25 ℃)
Param eter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Sym bol
VDS
VGS
ID
Ptot
Tch
Tstg
Ratings
13.0
4.0
1.2
3
150
-65 ~ 150
Unit
V
V
A
W
℃
℃
1 page  
TMF8901F
Output Power, Power Gain, Drain Efficiency
vs. Input Power
40
f = 470 MHz
35
I = 200 mA
idle
V = 3.6 V
DS
30
80
70
60
25
P
OUT
η
D
20
50
40
15 G 30
P
10 20
5 10
00
0 5 10 15 20 25
Input Power, P (dBm)
IN
40
f = 470 MHz
35
I = 50 mA
idle
V = 6.0 V
DS
30
P
OUT
25
20
15
η
D
G
P
10
5
0
0 5 10 15 20
Input Power, P (dBm)
IN
80
70
60
50
40
30
20
10
0
25
□ Test Circuit Schematic Diagram
VGG R1
R=6.8 kOhm
C6
C=100 nF
C5
C=10 nF
C1
C=2.2 nF
TL1
Subst="M Sub1"
W=1.37 m m
L=22 mm
L2
L=100 nH
R=
P_IN
C2
C=24 pF
R2
R=56 Ohm
C9
C=2.2 nF
C7
C=10 nF
C8 VDD
C=100 nF
L1
M o d e l =0 .4 x2 .0 x6 T
T M F8 9 0 1 F
TL2
Subst="M Sub1"
W=1.37 mm
L=15 mm
C4
C=2.2 nF
C3
C=18 pF
P_OUT
Test Board : 0.8mm FR4 glass epoxy
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TMF8901F.PDF ] | |
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