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Datasheet STS20T10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STS20T10   Low Vf Schottky Diode

STS20T10 Low Vf Schottky Diode 20.0A DESCRIPTION STS20T10 is designed with trench technology to provide excellent low Vf. Those devices are suitable for use for switching power supply. PIN CONFIGURATION (TO-220) FEATURE Vf<=0.65V Fast Switching Speed Low Forward Voltage, Reliable High Temperature
STANSON
STANSON		 datasheet STS20T10 pdf

STS20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STS20NHS3LL

N-CHANNEL POWER MOSFET

STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8™ STripFET™III Power MOSFET plus monolithic schottky General features Type STS20NHS3LL VDSS 30V RDS(on) 0.0042Ω ID 20A(1) 1. This value is rated accordingly to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on)
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STS20T10

Low Vf Schottky Diode

STS20T10 Low Vf Schottky Diode 20.0A DESCRIPTION STS20T10 is designed with trench technology to provide excellent low Vf. Those devices are suitable for use for switching power supply. PIN CONFIGURATION (TO-220) FEATURE Vf<=0.65V Fast Switching Speed Low Forward Voltage, Reliab
 STANSON
STANSON		 datasheet pdf - STANSON
STS20N3LLH6

N-channel MOSFET

STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ High avalanche ruggedness ro
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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