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PDF STS20NHS3LL Data sheet ( Hoja de datos )

Número de pieza STS20NHS3LL
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STS20NHS3LL
N-channel 30V - 0.0032- 20A - SO-8™
STripFET™III Power MOSFET plus monolithic schottky
General features
Type
STS20NHS3LL
VDSS
30V
RDS(on)
0.0042
ID
20A(1)
1. This value is rated accordingly to Rthj-pcb
Optimal RDS(on) x Qg trade-off @ 4.5V
Reduced switching losses
Reduced conduction losses
Improved junction-case thermal resistance
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology
and a proprietary process for integrating a
monolithic Schottky diode. The new Power
MOSFET is optimized for the most demanding
synchronous switch function in DC-DC converter
for Computer and Telecom.
Applications
Switching application
SO-8
Internal schematic diagram
Order codes
Part number
STS20NHS3LL
Marking
20HS3LL-
Package
SO-8
Packaging
Tape & reel
January 2007
Rev 5
1/12
www.st.com
12

1 page




STS20NHS3LL pdf
STS20NHS3LL
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=15V, ID=10A,
RG=4.7Ω, VGS=4.5V
(see Figure 12)
VDD=15V, ID=10A,
RG=4.7Ω, VGS=4.5V
(see Figure 12)
Min. Typ. Max. Unit
16 ns
45 ns
68 ns
8 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD=5A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A, di/dt = 100A/µs,
VDD=25V, Tj=150°C
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
20 A
80 A
0.75 V
30 ns
30 nC
2A
5/12

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STS20NHS3LL arduino
STS20NHS3LL
5 Revision history
Table 8. Revision history
Date
Revision
Changes
24-May-2005
1 Initial release.
19-Dec-2005
2 Inserted curves
05-Jan-2006
3 Modified value on On/off states
18-Jul-2006
4 The document has been reformatted
31-Jan-2007
5 Typo mistake on Table 1.
Revision history
11/12

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