Datasheet STK2NA60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STK2NA60	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 s s s s s s s V DSS 600 V R DS( on) < 8Ω ID 1.9 A TYPICAL RDS(on) = 7.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZ	ST Microelectronics

STK2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STK2N50	N-Channel Enhancement Mode Power MOS Transistor w w w .d e e h s a t a . u t4 m o c	ST Microelectronics
STK2NA60	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 s s s s s s s V DSS 600 V R DS( on) < 8Ω ID 1.9 A TYPICAL RDS(on) = 7.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES	ST Microelectronics
STK2N80	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N80 s s s s s s s V DSS 800 V R DS( on) < 7Ω ID 2.1 A TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLIC	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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