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PDF STK2NA60 Data sheet ( Hoja de datos )
| Número de pieza | STK2NA60 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
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STK2NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST K 2NA 60
VDSS
600 V
R DS( on)
<8Ω
ID
1.9 A
s TYPICAL RDS(on) = 7.2 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
12
SOT-82
3
2
1
SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
Value
600
600
± 30
1.9
1.2
7.6
50
0.4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/10
1 page  
Capacitance Variations
STK2NA60
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STK2NA60.PDF ] | |
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| STK2NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST Microelectronics |
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