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Datasheet PTFC210202FC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PTFC210202FC   Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced
Infineon
Infineon
datasheet PTFC210202FC pdf

PTFC21020 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with
Infineon
Infineon
datasheet pdf - Infineon


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