|
|
PDF PTFC210202FC Data sheet ( Hoja de datos )
| Número de pieza | PTFC210202FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTFC210202FC (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET
28 W, 28 V, 1800 – 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2110 to 2170 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC210202FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
24
60
20 Gain
16
12 Efficiency
40
20
0
8
PAR @ 0.01% CCDF
4
-20
-40
0
28
ptfc210202fc_g1
-60
32 36 40 44
Average Output Power (dBm)
Features
• Input matched
• Typical CW performance, 2170 MHz, 28 V,
combined outputs
- Output power at P1dB = 28 W
- Efficiency = 62%
- Gain = 20.9 dB
• Capable of handling 10:1 VSWR @28 V, 28 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
20
26.5
—
Typ
21
29
–31
Max
—
—
–28
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.4, 2016-06-22
1 page  
PTFC210202FC
Broadband Circuit Impedance
Z Source
G1
G2
D1 Z Load
S
D2
Frequency
MHz
2110
2120
2130
2140
2150
2160
2170
Z Source W
R jX
4.86
–0.01
4.89
–0.01
4.92
–0.01
4.95
–0.01
4.98
–0.02
5.00
–0.02
5.03
–0.03
Z Load W
R jX
3.59
–2.65
3.63
–2.65
3.68
–2.66
3.72
–2.68
3.76
–2.69
3.81
–2.71
3.85
–2.73
Load Pull Performance
Each Side Load Pull Performance – CW signal; VDD = 28 V, 85 mA
Max Output Power
P1dB
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
[W]
[dB]
[dBm]
[W]
[%]
Zl
[W]
2110 15.9 – j19.7 6.7 – j5.6
21.7
42.67
18.5
58.7 5.3 – j2.3
2140 15.7 – j18.8 7.6 – j4.9
22.3
42.16
16.4
60.5 4.9 – j2.3
2170 17.1 – j17.7 7.0 – j5.7
22.1
42.08
16.2
59.2 4.8 – j2.9
Max PAE
Gain
[dB]
POUT
[dBm]
23.7 41.25
24.1 40.89
23.9 40.87
POUT
[W]
13.3
12.3
12.2
PAE
[%]
67.8
67.3
66.6
Data Sheet
5 of 9
Rev. 03.4, 2016-06-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PTFC210202FC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTFC210202FC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |