Datasheet MTP50N06VL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTP50N06VL	TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cel	Motorola Semiconductors

MTP50N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTP50N06EL	TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06EL/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withsta	Motorola Semiconductors
MTP50N06V	TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than double	Motorola Semiconductors
MTP50N06VL	TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than dou	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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