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Datasheet MTP50N06V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP50N06V/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell d |
 Motorola Semiconductors |
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| 2 | MTP50N06V | Trans MOSFET N-CH 60V 42A 3-Pin(3+Tab) TO-220AB Rail |
 New Jersey Semiconductor |
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| 1 | MTP50N06VL | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP50N06VL/D
TMOS V Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cel |
Motorola Semiconductors |
|
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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