|
|
Datasheet MTE50N10QE3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTE50N10QE3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE50N10QE3
Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 1/ 8
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
BVD |
Cystech Electonics |
MTE50N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTE50N10QE3 | N-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
|
MTE50N10FP | N-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
|
MTE50N10BFP | N-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
Esta página es del resultado de búsqueda del MTE50N10QE3. Si pulsa el resultado de búsqueda de MTE50N10QE3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |