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Número de pieza | MTE50N10BFP | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTE50N10BFP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C141FP
Issued Date : 2015.08.18
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N10BFP BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=15A
Features
RDS(ON)@VGS=7V, ID=10A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
100V
24A
26.6 mΩ(typ)
34.2 mΩ(typ)
Symbol
MTE50N10BFP
Outline
TO-220FP
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
MTE50N10BFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE50N10BFP
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C141FP
Issued Date : 2015.08.18
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
C oss
100
0.1
100
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
VDS=10V
10
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
1 VDS=15V
0.1 Ta=25°C
Pulsed
0.01
0.001
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDSON
Limited
10
10μs
100μs
1ms
10ms
1 100ms
DC
0.1 TC=25°C, Tj=150°C
VGS=10V, RθJC=3.5°C/W
Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
6
4
VDS=50V
2 ID=24A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5 VGS=10V, RθJC=3.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE50N10BFP
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTE50N10BFP.PDF ] |
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