Datasheet MTD20N06HDL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTD20N06HDL	TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstan	Motorola Semiconductors

MTD20N06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTD20N06V	TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new tech	Motorola Semiconductors
MTD20N06HDL	TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is	Motorola Semiconductors
MTD20N06HD	TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD20N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS pow	Motorola Semiconductors

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