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Datasheet MMBT5089 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | MMBT5089 | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent HFE Linearity. z Power dissipation.(PC=0.2W).
Pb
Lead-free
MMBT5088/5089
APPLICATIONS
z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50m |
 Galaxy Microelectronics |
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| 12 | MMBT5089 | NPN Transistors MMBT5089【NPN Transistors / 200mW / SOT-23】
Features
◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA.
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base Voltage Collector Emitter Voltage Emitter B |
 HORNBY |
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| 11 | MMBT5089 | Silicon NPN transistor MMBT5089
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features 低噪声，高增益。 Low noise, high gain.
用途 / Applications
用于集电极电流在 1μA 至 50mA 的一� |
 BLUE ROCKET ELECTRONICS |
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| 10 | MMBT5089 | NPN General Purpose Amplifier MMBT5089 NPN General Purpose Amplifier
For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA.
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Emitter Voltage Collector Base Voltage Emit |
 CHINA BASE |
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