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PDF MMBT5089 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5089 | |
| Descripción | NPN Transistors | |
| Fabricantes | HORNBY | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT5089 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MMBT5089【NPN Transistors / 200mW / SOT-23】
Features
◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA.
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
Ic
Power Dissipation
Derate above 25℃
PD
DC Current Gain
Small Signal Current Gain
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCE=5V, IC=100uA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA, f=1KHz
IC=100μA
IC=1mA
IC=10mA, IB=1mA
IC=10mA, VCE=5V
VCB=15V
VEB=3V
VEB=4.5V
hFE
hfe
V(BR)CBO
V(BR)CEO
VCEsat
VBEon
ICBO
IEBO
Collector Base Capacitance
VCB=5V, f = 100KHz
Ccb
Emitter Base Capacitance
VBE=0.5V, f = 100KHz
Gain Bandwidth Product
VCE=5V, IC=500μA, f=20MHz
Noise Figure
VCE=5V, IC=100μA, Rs=10K
Ω, f = 10Hz to 15.7KHz
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Ceb
fT
NF
RθJA
TJ,TS
Min Typ Max
30
----- 25
-----
4.5
----- 100
-----
----- 200
2.8
-----
400 ----- 1200
450
-----
400
450 ----- 1800
30
-----
25
0.5
-----
0.8
50
----- 50
100
----- 4
10
50 -----
----- 2
357
-55 to +150
Unit
V
mA
mW
mW/℃
-----
V
nA
pF
MHz
dB
℃/W
℃
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT5089.PDF ] | |
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