Datasheet MMBD352WT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MMBD352WT1G	Dual Schottky Barrier Diode MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features  Very Low Capacitance − Less Than 1.0 pF @ 0 V  Low Forward Voltage − 0.5 V (Typ)	ON Semiconductor

MMBD352W Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MMBD352WT1G	Dual Schottky Barrier Diode MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features  Very Low Capacitance − Less Than 1.0 pF @ 0 V  Low Forward Vol	ON Semiconductor
MMBD352WT1	Dual Schottky Barrier Diode	Leshan Radio Company
MMBD352WT1	Dual Shottky Barrier Diode MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low	ON

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Número de pieza	Descripción	Fabricantes	PDF
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