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Datasheet MMBD352WT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MMBD352WT1 | Dual Shottky Barrier Diode
MMBD352WT1 Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
• Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − |
 ON |
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| 3 | MMBD352WT1 | Dual Schottky Barrier Diode |
 Leshan Radio Company |
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| 2 | MMBD352WT1 | Dual Schottky Barrier Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352WT1/D
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Le |
 Motorola Semiconductors |
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| 1 | MMBD352WT1G | Dual Schottky Barrier Diode MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ 0 V Low Forward Voltage − 0.5 V (Typ) |
 ON Semiconductor |
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