Datasheet MJE3055AT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MJE3055AT	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA APPLICATIONS ·Designed for use in g	Inchange Semiconductor

MJE305 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MJE3055	General Purpose and Switching Applications MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise no	Fairchild
MJE3055	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î	Motorola Semiconductors
MJE3055	NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)	Samsung

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Número de pieza	Descripción	Fabricantes	PDF
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