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Datasheet MJE3055 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 25 | MJE3055 | General Purpose and Switching Applications MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO |
 Fairchild |
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| 24 | MJE3055 | NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) |
 Samsung |
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| 23 | MJE3055 | SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose
SILICON EPITAXIAL PLANAR TRANSISTOR
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s
VCBO VCEO |
 Wing Shing Computer Components |
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| 22 | MJE3055 | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. Th |
 ST Microelectronics |
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