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Número de pieza | MJE3055AT | |
Descripción | Silicon NPN Power Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJE3055AT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE3055AT
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High DC Current Gain-
: hFE= 150-260@IC= 1A
·Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 mA
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
10 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
6A
75 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MJE3055AT.PDF ] |
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