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Datasheet MGP4N60E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MGP4N60E | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP4N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blo |
 Motorola Semiconductors |
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| 2 | MGP4N60E | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP4N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blo |
 ON |
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| 1 | MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP4N60ED/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP4N60ED
IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
N–Channel Enhancement–M |
ON |
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