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PDF MGP4N60ED Data sheet ( Hoja de datos )
| Número de pieza | MGP4N60ED | |
| Descripción | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: Eoff = 60 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 3.0 A, 125°C
• Soft Recovery Free Wheeling Diode
is Included in the Package
• Robust High Voltage Termination
G
• ESD Protection Gate–Emitter Zener Diodes
C
E
Order this document
by MGP4N60ED/D
MGP4N60ED
IGBT & DIODE IN TO–220
4.0 A @ 90°C
6.0 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
± 20 Vdc
6.0 Adc
4.0
8.0 Apk
62.5 Watts
0.51 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
2.0 °C/W
3.6
65
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s™ is a trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncIG. 1B99T8 Device Data
1
1 page  
0.20
VCC = 360 V
WVGE = 15 V
0.15 RG = 20
0.10
0.05
IC = 3.0 A
2.0 A
1.5 A
0
–50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Turn–Off Losses versus
Junction Temperature
150
10
TJ = 125°C
25°C
0.20
TJ = 125°C
VCC = 360 V
W0.15 VGE = 15 V
RG = 20
0.10
MGP4N60ED
0.05
0
01
2
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Turn–Off Losses versus
Collector Current
10
3
1
0.5 1 1.5 2 2.5
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
3
WTJ = 125°C
RGE = 20
VGE = 15 V
1
1 10 100 1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MGP4N60ED.PDF ] | |
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