Datasheet IXTP2N60P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP2N60P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 2N60P IXTY 2N60P VDSS ID25 RDS(on) = 500 = 2 ≤ 5.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M	IXYS Corporation

IXTP2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP2N60P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 2N60P IXTY 2N60P VDSS ID25 RDS(on) = 500 = 2 ≤ 5.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to	IXYS Corporation
IXTP2N80	High Voltage MOSFET Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150	IXYS Corporation
IXTP2N65X2	Power MOSFET ( Transistor ) Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY2N65X2 IXTP2N65X2 VDSS = ID25 = RDS(on) 650V 2A 2.3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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