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PDF IXTP2N60P Data sheet ( Hoja de datos )
| Número de pieza | IXTP2N60P | |
| Descripción | PolarHV Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 2N60P
IXTY 2N60P
VDSS =
ID25 =
≤RDS(on)
500
2
5.1
V
A
Ω
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 50 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-252
Maximum Ratings
600 V
600 V
± 30 V
± 40 V
2A
4A
2A
10 mJ
150 mJ
10 V/ns
55 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
0.8 g
TO-220 (IXTP)
G DS
TO-252 AA (IXTY)
G
S
G = Gate
S = Source
Features
(TAB)
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 25 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
±50 nA
1 µA
50 µA
5.1 Ω
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99422E(04/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTP2N60P.PDF ] | |
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