Datasheet IXFP4N100QM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFP4N100QM	Power MOSFET ( Transistor ) Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torq	IXYS Corporation

IXFP4N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFP4N100Q	HiPerFET Power MOSFETs Q-Class TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ	IXYS Corporation
IXFP4N100QM	Power MOSFET ( Transistor ) Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body f	IXYS Corporation
IXFP4N100PM	Power MOSFET ( Transistor ) Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25 RDS(on) = 1000V = 2.5A ≤ 3.3Ω OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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