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PDF IXFP4N100PM Data sheet ( Hoja de datos )
| Número de pieza | IXFP4N100PM | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarTM HiperFETTM
Power MOSFET
IXFP4N100PM
VDSS =
ID25 =
RDS(on) ≤
1000V
2.5A
3.3Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
www.DataSheet4U.net
Maximum Ratings
1000
1000
V
V
± 20 V
± 30 V
2.5 A
8.0 A
4.0 A
200 mJ
10
57
- 55 ... +150
150
- 55 ... +150
300
260
1.13/10
2.5
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 2A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
3.0 6.0 V
±100 nA
10 μA
750 μA
3.3 Ω
OVERMOLDED
GDS
G = Gate
S = Source
D = Drain
Features
z Plastic Overmolded Tab for Electrical
Isolation
z Avalanche Rated
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS100295(11/10)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP4N100PM.PDF ] | |
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