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Datasheet IXFN120N20P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXFN120N20P   PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXFN 120N20P N-Channel Enhancement Mode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 220 ns trr Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 2
 IXYS
IXYS		 datasheet IXFN120N20P pdf

IXFN120N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFN120N20

HiPer FET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1
ETC
ETC		 datasheet pdf - ETC
IXFN120N20P

PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXFN 120N20P N-Channel Enhancement Mode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 220 ns trr Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Te
 IXYS
IXYS		 datasheet pdf - IXYS
IXFN120N65X2

Power MOSFET ( Transistor )

Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN120N65X2 D G S S VDSS = ID25 = RDS(on)  650V 108A 24m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGS
 IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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