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PDF IXFN120N20P Data sheet ( Hoja de datos )
| Número de pieza | IXFN120N20P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS | |
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Advanced Technical Information
PolarHTTM
Power MOSFET
IXFN 120N20P
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on) ≤
trr ≤
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200 V
120 A
22 mΩ
220 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 175°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, t = 1 minute
Mounting torque
Terminal connection torque
200 V
200 V
±20 V
±30 V
120 A
75 A
300 A
60 A
60 mJ
2.0 J
10 V/ns
714 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
2500
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 4 mA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
22 mΩ
miniBLOC SOT-227B (IXFN)
E153432
S
G
S
D
Either Source terminal can be used as
Main or Kelvin Source
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low terminal inductance
z lOW Stray capacitance to heatsink
(<35pF)
z Molding compound meets UL 94 V-O
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99225(09/04)
1 page  
1.00
0.10
0.01
1
IXFN 120N20P
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Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2004 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFN120N20P.PDF ] | |
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