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Datasheet IDT71024S15TY Equivalent ( PDF ) - Cmos |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | IDT71024S15TY | CMOS STATIC RAM 1 MEG (128K x 8-BIT) CMOS STATIC RAM 1 MEG (128K x 8-BIT)
Integrated Device Technology, Inc.
IDT71024
FEATURES:
128K x 8 advanced high-speed CMOS static RAM Commercial (0° to 70°C), Industrial (-40° to 85°C) and Military (-55° to 125°C) temperature options Equal access and cycle times Military: 15, 17, 20, 25ns Industrial: 15, 20ns Commercial: 12, 15, 17, 20ns Two Chip Selects plus one Output Enable pin
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 Integrated Device Technology |
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
|  Infineon Technologies |
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| 2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
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| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
|  Infineon Technologies AG |
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| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| Infineon Technologies AG |
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| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
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| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
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| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
|  IDT |
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