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Datasheet IDT71024S12Y Equivalent ( PDF ) - Cmos

N.º Número de pieza Descripción Fabricantes Comprar ahora
1IDT71024S12Y CMOS STATIC RAM 1 MEG (128K x 8-BIT)

CMOS STATIC RAM 1 MEG (128K x 8-BIT) Integrated Device Technology, Inc. IDT71024 FEATURES: 128K x 8 advanced high-speed CMOS static RAM Commercial (0° to 70°C), Industrial (-40° to 85°C) and Military (-55° to 125°C) temperature options Equal access and cycle times Military: 15, 17, 20, 25ns Industrial: 15, 20ns Commercial: 12, 15, 17, 20ns Two Chip Selects plus one Output Enable pin
Integrated Device Technology
Integrated Device Technology
buy IDT71024S12Y


IDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 IDT02S60C Schottky Diode

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
Infineon Technologies
Infineon Technologies
datasheet IDT02S60C pdf
2 IDT03S60C Schottky Diode

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
Infineon Technologies
Infineon Technologies
datasheet IDT03S60C pdf
3 IDT04S60C 2nd Generation thinQ SiC Schottky Diode

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT04S60C pdf
4 IDT05S60C 2nd Generation thinQ SiC Schottky Diode

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT05S60C pdf
5 IDT06S60C 2nd Generation thinQ SiC Schottky Diode

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT06S60C pdf
6 IDT08S60C 2nd Generation thinQ SiC Schottky Diode

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT08S60C pdf
7 IDT100494 HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
datasheet IDT100494 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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