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Datasheet HVL192 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HVL192 | Silicon Epitaxial Planar Pin Diode
HVL192
Silicon Epitaxial Planar Pin Diode for Wireless LAN
REJ03G0417-0100 Rev.1.00 Nov 24, 2005
Features
• • • • Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance.(C = 0.30 pF max) Low forward resistance. (rf = 3.2 Ω ma |  Renesas Technology | diode |
HVL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HVL133A | Silicon Epitaxial Planar Pin Diode
HVL133A
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0066-0100Z Rev.1.00 Jan.21.2004
Features
• An optimal solution for antenna switching in mobile phones. • Low capacitance. (C1 = 1.0 pF max) • Low forward resistance. (rf = 0.7 Ω max) • Extremely sm Renesas Technology diode | | |
| 2 | HVL142AM | Silicon Epitaxial Planar Pin Diode
HVL142AM
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0198-0200 Rev.2.00 Jan 19, 2006
Features
• • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Thin Extrem Renesas Technology diode | | |
| 3 | HVL145 | Silicon Epitaxial Planar Pin Diode HVL145
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0434-0100 (Previous: ADE-208-1597) Rev.1.00 Dec 07, 2004
Features
• • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max) Extremely Renesas Technology diode | | |
| 4 | HVL147 | Silicon Epitaxial Trench Pin Diode for Antenna Switching
HVL147
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0393-0200 Rev.2.00 Oct 20, 2004
Features
• • • • • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extreme Renesas Technology diode | | |
| 5 | HVL147M | Silicon Epitaxial Trench Pin Diode HVL147M
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0394-0300 Rev.3.00 Jan 20, 2006
Features
• • • • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead P Renesas Technology diode | | |
| 6 | HVL192 | Silicon Epitaxial Planar Pin Diode
HVL192
Silicon Epitaxial Planar Pin Diode for Wireless LAN
REJ03G0417-0100 Rev.1.00 Nov 24, 2005
Features
• • • • Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance.(C = 0.30 pF max) Low forward resistance. (rf = 3.2 Ω ma Renesas Technology diode | | |
| 7 | HVL3224QE | LCD CONTROLLER
HVL3224QE
LCD CONTROLLER
HVL3224QE LCD CONTROLLER
May/30//2003
HYVIX 1
DataSheet 4 U .com
HVL3224QE
LCD CONTROLLER
■ GENERAL DESCRIPTION
The HYVIX-MAIN-R003, color-graphics 100 Pin TQFP LCD controller board displays 320-by-240 dot graphics for 65K S  ETC controller | |
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