Datasheet HVL147M Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HVL147M	Silicon Epitaxial Trench Pin Diode HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead P	Renesas Technology

HVL1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HVL145	Silicon Epitaxial Planar Pin Diode HVL145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0434-0100 (Previous: ADE-208-1597) Rev.1.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.	Renesas Technology
HVL192	Silicon Epitaxial Planar Pin Diode HVL192 Silicon Epitaxial Planar Pin Diode for Wireless LAN REJ03G0417-0100 Rev.1.00 Nov 24, 2005 Features • • • • Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance.(C = 0.30 pF max) Low forward resistan	Renesas Technology
HVL147M	Silicon Epitaxial Trench Pin Diode HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extreme	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
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