| P/N |
Descripción |
Fabr. |
PDF |
|
BC307C |
Amplifier Transistors(PNP)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC307, B, C BC308C Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 50
5.0 100 350 2.8
25 30
Vdc Vdc Vdc mAdc mW mW
|
 |
 |
Amplifier Transistors(PNP Silicon)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC307, D
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC307,B,C BC308C BC309B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°
|
 |
 |
SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C
TO-92 Plastic Package
General Purpose Transistors Deisgned For Small Signal Amplification
From DC To Low Radio Frequencies
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC307 BC308
|
 |
 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk
|
 |
 |