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| BC307C Description |
| SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C
TO-92 Plastic Package
General Purpose Transistors Deisgned For Small Signal Amplification
From DC To Low Radio Frequencies
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC307 BC308 BC309
Collector Emitter Voltage Collector Base Voltage
VCEO VCBO
45 25 25 50 30 30
Emitter Base
CDIL |
| Amplifier Transistors(PNP)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC307, B, C BC308C Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 50
5.0 100 350 2.8
25 30
Vdc Vdc Vdc mAdc mW mW, °C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.0 Watts 8.0 mW, °C
Operatin
Motorola Inc |
| Related Part Number |
BC319B | BC3.5 BC322 | BC307A BC318B | BC320B |
| DataSheet.es | 2020 | Contacto |