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BC307C PDF File ( Datasheet )

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BC307C
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 350mW 280MHz
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BC307C Description
SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base

CDIL
CDIL
Amplifier Transistors(PNP)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 45 50 5.0 100 350 2.8 25 30 Vdc Vdc Vdc mAdc mW mW, °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 Watts 8.0 mW, °C Operatin

Motorola  Inc
Motorola Inc




Related Part Number

BC319B  |  BC3.5  

BC322  |  BC307A  

BC318B  |  BC320B  



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