Datasheet BC309 Equivalent ( PDF ) - Transistor

BC307, 308, 309 BC307, 308, 309 Switching and Amplifier Applications Low Noise: BC309 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC307 : BC308, 309 VCEO Collector-Emitter Voltage : BC307 : BC308, 309 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation

, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BC177,8,9 BC257,8,9 .BC307,8,9 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS, BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9. BC307, 8

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC307 BC308

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal flesistance. Junction to Ambien