| P/N |
Descripción |
Fabr. |
PDF |
|
BC307 |
PNP Silicon Epitaxial Planar Transistor
BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
1. Collector 2. Base 3. Emitter TO-92 Plastic Package
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TS
|
 |
 |
SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C
TO-92 Plastic Package
General Purpose Transistors Deisgned For Small Signal Amplification
From DC To Low Radio Frequencies
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC307 BC308
|
 |
 |
Amplifier Transistors(PNP)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC307, D
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC307,B,C BC308C BC309B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°
|
 |
 |
Amplifier Transistors(PNP Silicon)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC307, D
Amplifier Transistors
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC307 BC307B BC307C BC308C
1 2 3
CASE 29 04, STYLE 17 TO 92 (TO 226AA)
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total
|
 |
 |
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D186
BC307; BC307B PNP general purpose transistors
Product speci cation File under Discrete Semiconductors, SC04 1997 Mar 07
Philips Semiconductors
Product speci cation
PNP general purpose transistors
BC307; BC307B
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. D
|
 |
 |