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Datasheet APT6035BN Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | APT6035BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT6035BN 600V
19.0A 0.35Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipa |
Advanced Power Technology |
APT603 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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APT6035BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
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APT6030BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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