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PDF APT6035BN Data sheet ( Hoja de datos )
| Número de pieza | APT6035BN | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Advanced Power Technology | |
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D
G
S
TO-247
APT6035BN 600V 19.0A 0.35Ω
POWER MOS IV®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT6035BN
UNIT
VDSS
ID
IDM
VGS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
600 Volts
19
Amps
76
±30 Volts
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
310 Watts
2.5 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range
TL Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
RDS(ON) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
MIN
600
19
2
TYP MAX UNIT
Volts
Amps
0.35 Ohms
250
1000
±100
4
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet APT6035BN.PDF ] | |
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