Datasheet AO9926E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AO9926E	Dual N-Channel Enhancement Mode Field Effect Transistor AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It i	Alpha & Omega Semiconductors

AO99 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AO9926A	Dual N-Channel Enhancement Mode Field Effect Transistor Jan 2003 AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be us	ETC
AO9926B	20V Dual N-Channel MOSFET AO9926B 20V Dual N-Channel MOSFET General Description The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectio	Alpha & Omega Semiconductors
AO9926	Dual N-Channel Enhancement Mode Field Effect Transistor Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used	Alpha Industries

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Número de pieza	Descripción	Fabricantes	PDF
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