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Datasheet AO9926 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | AO9926 | Dual N-Channel Enhancement Mode Field Effect Transistor Feb 2003
AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in pa |
Alpha Industries |
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3 | AO9926A | Dual N-Channel Enhancement Mode Field Effect Transistor Jan 2003
AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in |
ETC |
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2 | AO9926B | 20V Dual N-Channel MOSFET AO9926B
20V Dual N-Channel MOSFET
General Description
The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directiona |
Alpha & Omega Semiconductors |
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1 | AO9926E | Dual N-Channel Enhancement Mode Field Effect Transistor AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It i |
Alpha & Omega Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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