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PDF AO9926E Data sheet ( Hoja de datos )
| Número de pieza | AO9926E | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO9926E
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO9926E is Pb-free (meets ROHS & Sony 259
specifications). AO9926EL is a Green Product
ordering option. AO9926E and AO9926EL are
Features
VDS (V) = 20V
ID = 8A (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 4.5V)
RDS(ON) < 25mΩ (VGS = 2.5V)
RDS(ON) < 33mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
8
6.4
30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO9926E.PDF ] | |
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