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Datasheet AO8806 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | AO8806 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Dec 2002
AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or |
 ETC |
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| 1 | AO8806 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8806
General Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
The AO8806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirec |
 FreesCale |
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