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PDF AO8806 Data sheet ( Hoja de datos )
| Número de pieza | AO8806 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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Dec 2002
AO8806
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AO8806 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-
drain configuration.
VDS (V) = 20V
ID = 6 A
RDS(ON) < 25mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 2.5V)
RDS(ON) < 40mΩ (VGS = 1.8V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6.4
5.4
30
1.5
1.08
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8806.PDF ] | |
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