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PDF AO8801 Data sheet ( Hoja de datos )
| Número de pieza | AO8801 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
Features
VDS (V) = -20V
ID = -4.7 A (VGS = -4.5V)
RDS(ON) < 42mΩ (VGS = -4.5V)
RDS(ON) < 53mΩ (VGS = -2.5V)
RDS(ON) < 70mΩ (VGS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-4.7
-3.7
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8801.PDF ] | |
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