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Número de pieza | AO8806 | |
Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | FreesCale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO8806 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO8806
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common- drain configuration.
Features
VDS (V) = 20V
ID = 6 A
RDS(ON) < 25mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 2.5V)
RDS(ON) < 40mΩ (VGS = 1.8V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6.4
5.4
30
1.5
1.08
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO8806.PDF ] |
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