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PDF SMG2398N Data sheet ( Hoja de datos )

Número de pieza SMG2398N
Descripción N-Channel MosFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SMG2398N
2.2 A, 60 V, RDS(ON) 194 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and battery-
powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
PRODUCT SUMMARY
SMG2398N
VDS(V)
60
RDS(on) (m
194@VGS= 10V
273@VGS= 4.5V
ID(A)
2.2
1.8
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
60
±20
2.2
1.7
±15
1.7
1.3
0.8
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction to Ambient 1
Notes
t 5 sec
Steady State
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RJA
Maximum
100
166
Unit
V
V
A
A
A
A
W
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
25-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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