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PDF SMG2398NE Data sheet ( Hoja de datos )
| Número de pieza | SMG2398NE | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2398NE
2.2 A, 60 V, RDS(ON) 194 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
trench process to provide Low RDS(on) and to ensure minimal power loss
and heat dissipation. Typical applications are DC-DC converters and
power management in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
PRODUCT SUMMARY
SMG2398NE
VDS(V)
60
RDS(on) (m
194@VGS= 10V
273@VGS= 4.5V
ID(A)
2.2
1.8
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
60
±20
2.2
1.7
±15
1.7
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction to Ambient 1
Notes
t ≦ 5 sec
Steady State
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RJA
Maximum
100
166
Unit
°C / W
http://www.SeCoSGmbH.com/
25-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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