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PDF SMG2325 Data sheet ( Hoja de datos )
| Número de pieza | SMG2325 | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMG2325 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2325 is the N-Channel logic enhancement
mode power filed effect transistors are produced using
high Cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
Resistance
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
2325
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1, VGS@10V
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
TA=70°C
TA=25°C
ID
IDM
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
Ratings
250
±20
0.45
0.35
1.4
0.8
-55~150
156
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2325.PDF ] | |
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